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Salvalaglio, Marco
TU Dresden
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (31/31 displayed)
- 2022Controlling magnetic anisotropy in amplitude expansion of phase field crystal model
- 2021Scalable Disordered Hyperuniform Architectures via Nanoimprint Lithography of Metal Oxidescitations
- 2021Doubly degenerate diffuse interface models of anisotropic surface diffusioncitations
- 2021Doubly degenerate diffuse interface models of surface diffusioncitations
- 2020Hyperuniform monocrystalline structures by spinodal solid-state dewettingcitations
- 2020Self-assembly of nanovoids in Si microcrystals epitaxially grown on deeply patterned substratescitations
- 2020Hyperuniform Monocrystalline Structures by Spinodal Solid-State Dewettingcitations
- 2019CONVEXITY SPLITTING IN A PHASE FIELD MODEL FOR SURFACE DIFFUSION
- 2019Deterministic 3D self-assembly of Si through a rim-less and topology-preserving dewetting regime
- 2019Closing the gap between atomic-scale lattice deformations and continuum elasticitycitations
- 2019Deterministic three-dimensional self-assembly of Si through a rimless and topology-preserving dewetting regimecitations
- 2018Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instabilitycitations
- 2017Controlling the energy of defects and interfaces in the amplitude expansion of the phase-field crystal modelcitations
- 2017Strain Engineering in Highly Mismatched SiGe/Si Heterostructurescitations
- 2017Fully coherent Ge islands growth on Si nano-pillars by selective epitaxycitations
- 2017Complex dewetting scenarios of ultrathin silicon films for large-scale nanoarchitecturescitations
- 2017Phase-field simulations of faceted Ge/Si-crystal arrays, merging into a suspended filmcitations
- 2017Strain engineering in highly mismatched SiGe/Si heterostructurescitations
- 2016Thin-film growth dynamics with shadowing effects by a phase-field approachcitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Temperature-controlled coalescence during the growth of Ge crystals on deeply patterned Si substratescitations
- 2016Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystalscitations
- 2016Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillarscitations
- 2016Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystalscitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2016From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructurescitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015Continuum modeling of heteroepitaxial growth: elastic relaxation, surface-energy minimization, misfit dislocations and intermixing
- 2015Faceting of equilibrium and metastable nanostructures: a Phase-Field model of surface diffusion tackling realistic shapescitations
- 2015Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars
- 2015Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Sicitations
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article
Doubly degenerate diffuse interface models of anisotropic surface diffusion
Abstract
<p>We extend the doubly degenerate Cahn-Hilliard (DDCH) models for isotropic surface diffusion, which yield more accurate approximations than classical degenerate Cahn-Hilliard (DCH) models, to the anisotropic case. We consider both weak and strong anisotropies and demonstrate the capabilities of the approach for these cases numerically. The proposed model provides a variational and energy dissipative approach for anisotropic surface diffusion, enabling large-scale simulations with material-specific parameters.</p>