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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ronning, Carsten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Selective Generation of Luminescent Defects in Hexagonal Boron Nitridecitations
- 2023High‐Temperature Laser‐Assisted Synthesis of Boron Nanorods, Nanowires, and Bamboo‐Like Nanotubescitations
- 2023Early oxidation stages of austenitic stainless steel monitored using Mn as tracercitations
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2022Tuning carrier density and phase transitions in oxide semiconductors using focused ion beamscitations
- 2022Wide‐Bandgap Double Perovskites with Multiple Longitudinal‐Optical Phonon Scatteringcitations
- 2021Fast recovery of ion-irradiation-induced defects in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> thin films at room temperaturecitations
- 2020Polarization Dependent Excitation and High Harmonic Generation from Intense Mid-IR Laser Pulses in ZnOcitations
- 2020Hot electrons in a nanowire hard X-ray detectorcitations
- 2019Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantationcitations
- 2018Dynamics of nanoparticle morphology under low energy ion irradiationcitations
- 2014Electron-beam-induced current at absorber back surfaces of Cu (In,Ga) Se2 thin-film solar cellscitations
- 2013Controlled synthesis of ultrathin ZnO nanowires using micellar gold nanoparticles as catalyst templatescitations
- 2001Superhard, conductive coatings for atomic force microscopy cantileverscitations
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article
Selective Generation of Luminescent Defects in Hexagonal Boron Nitride
Abstract
<jats:title>Abstract</jats:title><jats:p>Single photon emitters from atomic defects in crystals like hexagonal boron nitride (hBN) are vital for quantum technologies. Although various techniques are devised to obtain defects emission in hBN, simultaneous control over defects position, type, and emission spectrum has not been achieved yet. Here, ion implantation with <jats:sup>12</jats:sup>C, <jats:sup>20</jats:sup>Ne, and <jats:sup>69</jats:sup>Ga are used to create a composite defects population with emission ≈820 nm. The correlation of Raman and photoluminescence (PL) spectroscopy helps to identify the defects’ type. After selecting Ga as the ion species yielding the maximum emitter brightness, a strategy based on thermal annealing is developed to modify the composition of the induced defects. This results in an emitter ensemble with selected spectral properties, even when starting from different implantation conditions. Specifically, thermal annealing induces a defect transmutation from one type to another, shifting the emission wavelength from 820 to 625 nm. Moreover, sample patterning is combined with focused ion beam implantation and subsequent annealing in an efficient method to deterministically set the defects position as well as the PL spectral composition. These results offer a practical avenue to achieve in situ positioning and tuning of ensembles of emitters in hBN, promising for quantum information and sensing applications.</jats:p>