693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johnson, Andrew L.
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (40/40 displayed)
- 2024Zinc and cadmium thioamidate complexes:rational design of single-source precursors for the AACVD of ZnScitations
- 2024Plasma-Enhanced Atomic Layer Deposition of Hematite for Photoelectrochemical Water Splitting Applications
- 2023Multi-pulse atomic layer deposition of p-type SnO thin filmscitations
- 2022N-O Ligand Supported Stannylenescitations
- 2021Evaluation of Sn(II) Aminoalkoxide Precursors for Atomic Layer Deposition of SnO Thin Films.citations
- 2021Tin(II) Ureide Complexes:Synthesis, Structural Chemistry and Evaluation as SnO precursorscitations
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2021Tin(II) Ureide Complexescitations
- 2021Atomic layer deposition method of metal (II), (0), or (IV) containing film layer
- 2019Aerosol-Assisted Chemical Vapor Deposition of ZnS from Thioureide Single Source Precursorscitations
- 2019Synthetic, Structural and Computational Studies on Heavier Tetragen and Chalcogen Triazenide Complexescitations
- 2019Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cellscitations
- 2018Synthesis, Characterisation and Thermal Properties of Sn(II) Pyrrolide Complexescitations
- 2018Oxidative Addition to Sn(II) Guanidinate Complexes: Precursors to Tin(II) Chalcogenide Nanocrystalscitations
- 2018Recent developments in molecular precursors for atomic layer depositioncitations
- 2018Tin Guanidinato Complexes: Oxidative Control of Sn, SnS, SnSe and SnTe Thin Film Depositioncitations
- 2017Deposition of SnS Thin Films from Sn(II) Thioamidate Precursorscitations
- 2017Aerosol-Assisted chemical vapor deposition of cds from xanthate single source precursorscitations
- 2016Aerosol-assisted CVD of SnO from stannous alkoxide precursorscitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me 2 M{tfacnac}] [M = Al, Ga, In; Htfacnac = F 3 CC(OH)CHC(CH 3 )NCH 2 CH 2 OCH 3 ]citations
- 2016Cobalt(I) olefin complexes:precursors for metal-organic chemical vapor deposition of high purity cobalt metal thin filmscitations
- 2016Homoleptic zirconium amidatescitations
- 2016Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]citations
- 2015Tailoring precursors for depositioncitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Synthesis and characterization of fluorinated β-ketoiminate zinc precursors and their utility in the AP-MOCVD growth of ZnO:Fcitations
- 2015Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursorcitations
- 2014Single-source AACVD of composite cobalt-silicon oxide thin filmscitations
- 2014The first crystallographically-characterised Cu(II) xanthatecitations
- 2013Synthesis of heterobimetallic tungsten acetylacetonate/alkoxide complexes and their application as molecular precursors to metal tungstatescitations
- 2013Development of metal chalcogenide precursors for use in chemical vapour deposition (CVD) and colloidal nano particle synthesis
- 2013CVD of pure copper films from novel iso-ureate complexescitations
- 2013Inorganic and organozinc fluorocarboxylatescitations
- 2012Photoactivated linkage isomerism in single crystals of nickel, palladium and platinum di-nitro complexes: A photocrystallographic investigationcitations
- 2011Synthesis of complexes with the polydentate ligand N,N '-bis(2-hydroxyphenyl)-pyridine-2,6-dicarboxamidecitations
- 2011Synthesis, characterization, and materials chemistry of group 4 silylimidescitations
- 2009Structural Tungsten-Imido Chemistry: The Gas-Phase Structure of W(NBut)(2)(NHBut)(2) and the Solid-State Structures of Novel Heterobimetallic W/N/M (M = Rh, Pd, Zn) Speciescitations
- 2009Synthesis and structure of aluminium amine-phenolate complexescitations
- 2001Tungsten(VI) metallacarborane imido complexes; hydrogen bonding to a bent imido ligand in {W(Nt(Bu)2[N(H)C(Me)NHtBu](C2 B9H11}
- 2000First structural characterisation of a 2,1,12-MC2B9 metallacarborane, [2,2,2-(NMe2)3-closo-2,1,12-TaC2B 9H11]. Trends in boron NMR shifts on replacing a {BH} vertex with a metal {MLn} vertex in icosahedral carboranescitations
Places of action
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article
Synthesis, Structure and CVD Studies of the Group 13 Complexes [Me2M{tfacnac}] [M = Al, Ga, In; Htfacnac = F3CC(OH)CHC(CH3)NCH2CH2OCH3]
Abstract
A family of group 13 metal dimethyl complexes of the general form [Me2M{ MeC(O)CHC(NCH2CH2OMe)CF3}] (M = Al (2), Ga (3) or In (4)) have been synthesised by reaction of the isolated free ligand (1) with the corresponding trimethyl-metal reagents. The isolated complexes (2-4) were characterised by elemental analysis, NMR spectroscopy, and the molecular structures of the complexes were determined by single crystal X-ray diffraction which reveals the compounds to be monomeric 5 coordinate complexes with coordination of the pendent ether bearing lariat in the solid state. Thermogravimetric analysis showed complexes 2-4 all to have residual masses, at 200 °C, of 2.4% or less well below the value for the respective metal oxides, and vapour pressure measurements show the indium complex (4) to be an order of magnitude less volatile (0.09 Torr at 80 oC) than the Al (2) or Ga (3) derivatives despite being isoleptic systems. Complexes 2-4 have all been investigated for their utility in the LP-MOCVD growth of the respective metal oxides in the absence of additional oxidant at 400 °C on silicon substrates.