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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Niskanen, Antti
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2007Radical-enhanced atomic layer deposition of silver thin films using phosphine-adducted silver carboxylatescitations
- 2007Radical enhanced atomic layer deposition of titanium dioxidecitations
- 2005Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Filmscitations
- 2000Reactively sputtered Ta2N and TaN diffusion barriers for copper metallization
Places of action
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article
Radical enhanced atomic layer deposition of titanium dioxide
Abstract
Titanium dioxide films are grown with radical-enhanced atomic layer deposition (RE-ALD) from titanium isopropoxide and oxygen radicals at between 50 and 300 degrees C on silicon, glass, platinum, and RuO2 surfaces. Additionally, the films are grown on polymers and natural fibers at 50 degrees C. The oxygen radicals are produced by dissociating molecular oxygen with a remote microwave plasma discharge. Purified argon is used as the carrier and purge gas. Growth rate saturation and conformal growth are observed, and thus the film growth in the ALD mode was proven. The saturated growth rate is 0.19 nm per cycle at 50 degrees C, with an overall cycle time of 11 s. The film grown at 50 degrees C has a dielectric constant of 20, and undergoes catastrophic breakdown at 0.6 MV cm(-1) electric field. It contains 13 at.-% hydrogen and 4 at.-% carbon. As the deposition temperature is increased to 250 degrees C, the impurity contents decrease to 0.5 at.-% for hydrogen and 0.4 at.-% for carbon. The film density and refractive index are 3.2 g cm(-3) and 2.2, respectively, for a film deposited at 50 degrees C, and increases to 3.8 g cm(-3) and 2.4, respectively, for a film deposited at 250 degrees C. All the films grown below 250 degrees C are amorphous according to X-ray diffraction (XRD).