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Pore, Viljami
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Topics
Publications (8/8 displayed)
- 2011Atomic Layer Deposition of GeTe
- 2010Silver Coated Platinum Core–Shell Nanostructures on Etched Si Nanowires: Atomic Layer Deposition (ALD) Processing and Application in SERScitations
- 2009Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and seleniumcitations
- 2009Alkylsilyl compounds of selenium and tellurium
- 2009Explosive crystallization in atomic layer deposited mixed titanium oxidescitations
- 2007Atomic layer deposition in nanotechnology applications
- 2007Atomic layer deposition of titanium disulfide thin filmscitations
- 2006Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide filmscitations
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article
Atomic layer deposition of titanium disulfide thin films
Abstract
Titanium disulfide thin films are grown by atomic layer deposition (ALD) at 400-500 degrees C using TiCl4 and H2S as precursors. Soda-lime glass, silicon, and thin films of TiN, ZnS, Rh, Ir, Pd, Pt, and Ru are used as substrates. Hexagonal (001)-oriented TiS2 is deposited on ZnS at 400 degrees C with growth rates of between 0.15 and 0.20 angstrom per cycle. Randomly oriented, hexagonal, platelike crystals are deposited on glass and TiN with a growth rate of 0.26 angstrom per cycle. Significant variations in surface morphologies were detected in TiS2 films on various noble metals. TiS2 was also grown on the pore walls of an alumina membrane.