| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pore, Viljami
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2011Atomic Layer Deposition of GeTe
- 2010Silver Coated Platinum Core–Shell Nanostructures on Etched Si Nanowires: Atomic Layer Deposition (ALD) Processing and Application in SERScitations
- 2009Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and seleniumcitations
- 2009Alkylsilyl compounds of selenium and tellurium
- 2009Explosive crystallization in atomic layer deposited mixed titanium oxidescitations
- 2007Atomic layer deposition in nanotechnology applications
- 2007Atomic layer deposition of titanium disulfide thin filmscitations
- 2006Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide filmscitations
Places of action
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article
Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films
Abstract
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe3)(2)](3), and water as precursors in the substrate temperature range of 150-250 degrees C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La2O3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO3 at 225 degrees C from La[N(SiMe3)(2)](3), Al(CH3)(3), and H2O. The lanthanum beta-diketonate precursor, La(thd)(3), was used as the reference precursor.