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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bonechi, Marco
University of Florence
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Electrodeposition of Sn-Ru Alloys by Using Direct, Pulsed, and Pulsed Reverse Current for Decorative Applicationscitations
- 2024On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutionscitations
- 2024Electrodeposition of Nanostructured Metals on n-Silicon and Insights into Rhodium Deposition
- 2023Chiral “doped” MOFs: an electrochemical and theoretical integrated studycitations
- 2022Magnetic Field Effect on the Handedness of Electrodeposited Heusler Alloycitations
- 2022Magnetic Field Effect on the Handedness of Electrodeposited Heusler Alloycitations
- 2022Electroplating on Al6082 Aluminium: A New Green and Sustainable Approachcitations
- 2022A systematic study of pulse and pulse reverse plating on acid copper bath for decorative and functional applicationscitations
- 2020Influence of Chiral Compounds on the Oxygen Evolution Reaction (OER) in the Water Splitting Processcitations
Places of action
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article
On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions
Abstract
<jats:title>Abstract</jats:title><jats:p>Our society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra‐high vacuum equipment. Here we report on the possibility of growing a p–n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E‐ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu<jats:sub>2</jats:sub>S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X‐Ray Diffraction (SXRD) and resulted in the fabrication of a thin double‐layer structure with a high degree of crystallographic order and a well‐defined interface. The high‐performance electrical characteristics of the device were analysed ex‐situ and show the characteristic feature of a diode.</jats:p>