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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Poggini, Lorenzo
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Topics
Publications (10/10 displayed)
- 2024Assembling Fe4 Single Molecule Magnets on a TiO2 monolayer
- 2024On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutionscitations
- 2024Ultrasmall nickel nanoparticles on a covalent triazine framework for ammonia borane hydrolysis and transfer hydrogenation of nitroaromaticscitations
- 2022Magnetic Ordering in Ultrasmall Potassium Ferrite Nanoparticles Grown on Graphene Nanoflakescitations
- 2022Magnetic Ordering in Ultrasmall Potassium Ferrite Nanoparticles Grown on Graphene Nanoflakescitations
- 2022Unveiling the Role of PEO-Capped TiO2 Nanofiller in Stabilizing the Anode Interface in Lithium Metal Batteriescitations
- 2018Vertical Tunnel Junction Embedding a Spin Crossover Molecular Filmcitations
- 2018Room temperature control of spin states in a thin film of a photochromic iron(II) complexcitations
- 2014Grafting single molecule magnets on gold nanoparticlescitations
- 2014Tetrairon(III) Single-Molecule Magnet Monolayers on Gold: Insights from ToF-SIMS and Isotopic Labelingcitations
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article
On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions
Abstract
<jats:title>Abstract</jats:title><jats:p>Our society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra‐high vacuum equipment. Here we report on the possibility of growing a p–n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E‐ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu<jats:sub>2</jats:sub>S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X‐Ray Diffraction (SXRD) and resulted in the fabrication of a thin double‐layer structure with a high degree of crystallographic order and a well‐defined interface. The high‐performance electrical characteristics of the device were analysed ex‐situ and show the characteristic feature of a diode.</jats:p>