| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Carla, Francesco
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutionscitations
- 2023Understanding passive film degradation and its effect on hydrogen embrittlement of super duplex stainless steel-Synchrotron X-ray and electrochemical measurements combined with CalPhaD and ab-initio computational studiescitations
- 2022Structure of the Surface Region of Stainless Steel: Bulk and Thin Filmscitations
- 2021Studying the onset of galvanic steel corrosion in situ using thin films: film preparation, characterization and application to pittingcitations
- 2019Potential-Induced Pitting Corrosion of an $mathrm{IrO_{2}(110)-RuO_{2}(110)/Ru(0001)}$ Model Electrode under Oxygen Evolution Reaction Conditionscitations
- 2019Potential-Induced Pitting Corrosion of an IrO2(110)-RuO2(110)/Ru(0001) Model Electrode under Oxygen Evolution Reaction Conditionscitations
- 2017Integration of electrochemical and synchrotron-based X-ray techniques for in-situ investigation of aluminum anodizationcitations
- 2014A Procedure to Analyze SXRD Data of CuxSz and CuxZnySz Thin Films
Places of action
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article
On the Electrochemical Growth of a Crystalline p–n Junction From Aqueous Solutions
Abstract
<jats:title>Abstract</jats:title><jats:p>Our society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra‐high vacuum equipment. Here we report on the possibility of growing a p–n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E‐ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu<jats:sub>2</jats:sub>S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X‐Ray Diffraction (SXRD) and resulted in the fabrication of a thin double‐layer structure with a high degree of crystallographic order and a well‐defined interface. The high‐performance electrical characteristics of the device were analysed ex‐situ and show the characteristic feature of a diode.</jats:p>