| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lee, Sang Bok
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2024Advanced Molecular Layer Deposition of Si<sub>x</sub>Zn<sub>y</sub>O<sub>z</sub> Thin Film Coatings for Improved Electrochemical Performance of NMC811
- 2023On-Wafer Wide-Pore Anodic Aluminum Oxidecitations
- 2020Protection layers for metal anodes
- 2015Electrode Degradation Study of Vertically Aligned Carbon Nanotubes on a 3D Integrated Current Collectorcitations
Places of action
| Organizations | Location | People |
|---|
article
Advanced Molecular Layer Deposition of Si<sub>x</sub>Zn<sub>y</sub>O<sub>z</sub> Thin Film Coatings for Improved Electrochemical Performance of NMC811
Abstract
<jats:title>Abstract</jats:title><jats:p>The practical realization of Nickel‐rich layered oxide cathode materials such as LiNi<jats:sub>0.8</jats:sub>Mn<jats:sub>0.1</jats:sub>Co<jats:sub>0.1</jats:sub>O<jats:sub>2</jats:sub> (NMC811) is hampered by several structural and interfacial instabilities over prolonged cycling. Several reports have proposed surface passivation via an artificial cathode electrolyte interphase (ACEI) as a promising method for mitigating the parasitic reactions affecting NMC811 while simultaneously improving its electrochemical performance over prolonged cycling. Herein, we report an in‐house designed (tBuMe<jats:sub>2</jats:sub>Si)<jats:sub>2</jats:sub>Zn single source precursor for developing Si<jats:sub>x</jats:sub>Zn<jats:sub>y</jats:sub>O<jats:sub>z</jats:sub> ternary CEI thin films on NMC811 via molecular layer deposition (MLD) in combination with O<jats:sub>3</jats:sub> or H<jats:sub>2</jats:sub>O as oxidizing agent. We demonstrate that the single precursor (tBuMe<jats:sub>2</jats:sub>Si)<jats:sub>2</jats:sub>Zn avoids the need for two different precursors (Si & Zn). In‐depth spectroscopic studies reveal the mechanism of the formation of organosiloxane/zinc‐oxide composite thin film, via intermediates of unprecedented organo‐silicon‐zinc compounds. Understanding the reaction mechanism paved the path for a successful deposition of ACEI on NMC811. Rate capability studies shows the ACEI protected cathodes exhibit higher discharge capacity at 4 C than pristine NMC811. Furthermore, studies on full cells with graphite anode were conducted to evaluate the practical viability of Si<jats:sub>x</jats:sub>Zn<jats:sub>y</jats:sub>O<jats:sub>z</jats:sub> ACEI thin films on NMC811. After prolonged cycling the ACEI‐coated NMC811 full cells significantly improved the electrochemical performance than pristine NMC811 by ~12%.</jats:p>