| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jambor, Roman
University of Pardubice
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2021Synthesis and optical properties of N→Ga coordinated gallium boroxinescitations
- 2019Synthesis and Application of Monomeric Chalcogenolates of 13 Group Elementscitations
- 2018Heavier pnictinidene gold(I) complexescitations
- 2017Application of imaging spectroscopic reflectometry for characterization of gold reduction from organometallic compound by means of plasma jet technology ; Využití zobrazovací spektroskopické reflektometrie pro charakterizaci redukce zlata z organokovových látek pomocí technologie plasmového paprskucitations
- 2015Reactivity of bis(organoamino)phosphanes with magnesium(II) compounds.citations
- 2012Monomeric organoantimony(III) sulphide and selenide with terminal Sb-E bond (E = S, Se). Synthesis, structure and theoretical consideration
Places of action
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article
Synthesis and Application of Monomeric Chalcogenolates of 13 Group Elements
Abstract
<jats:title>Abstract</jats:title><jats:p>Utilization of the N,C,N‐chelating ligand L (L={2,6‐(Me<jats:sub>2</jats:sub>NCH<jats:sub>2</jats:sub>)<jats:sub>2</jats:sub>C<jats:sub>6</jats:sub>H<jats:sub>3</jats:sub>}<jats:sup>−</jats:sup>) in the chemistry of 13 group elements provided either N→In coordinated monomeric chalcogenides LIn(μ‐E<jats:sub>4</jats:sub>) (E=S, Se) with unprecedented InE<jats:sub>4</jats:sub> inorganic ring or monomeric chalcogenolates LM(EPh)<jats:sub>2</jats:sub> (M=Ga, In). Complex LGa(SePh)<jats:sub>2</jats:sub> was selected as the most suitable single source precursor (SSP) for the deposition of amorphous semiconducting GaSe thin films using spin coating method.</jats:p>