| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Wolff, Niklas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2023Unlocking High‐Performance Supercapacitor Behavior and Sustained Chemical Stability of 2D Metallic CrSe<sub>2</sub> by Optimal Electrolyte Selectioncitations
- 2023Synthesis and Nanostructure Investigation of Hybrid β-Ga2 O3 /ZnGa2 O4 Nanocomposite Networks with Narrow-Band Green Luminescence and High Initial Electrochemical Capacitycitations
- 2022Ultrathin Al1−xScxN for Low‐Voltage‐Driven Ferroelectric‐Based Devicescitations
- 2022Investigation of Wafer-Level Fabricated Permanent Micromagnets for MEMScitations
- 2022Control of magnetoelastic coupling in Ni/Fe multilayers using He+ ion irradiationcitations
- 2021Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScNcitations
- 2020Facile fabrication of semiconducting oxide nanostructures by direct ink writing of readily available metal microparticles and their application as low power acetone gas sensorscitations
- 2020Nanocharacterization of Functional Materials for Biomagnetic Sensing an Breath Analysis ; Charakterisierung funktionaler Nanomaterialien für biomagnetische Sensoren und Atemanalyse
- 2019Low-Temperature Solution Synthesis of Au-Modified ZnO Nanowires for Highly Efficient Hydrogen Nanosensorscitations
- 2019The effect of morphology and functionalization on UV detection properties of ZnO networked tetrapods and single nanowirescitations
- 2018Zinc oxide nanotetrapods with four different arm morphologies for versatile nanosensorscitations
- 2018ZnAl2O4-Functionalized Zinc Oxide Microstructures for Highly Selective Hydrogen Gas Sensing Applicationscitations
- 2016Single and networked CuO nanowires for highly sensitive p-type semiconductor gas sensor applicationscitations
Places of action
| Organizations | Location | People |
|---|
article
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>N
Abstract
<jats:title>Abstract</jats:title><jats:p>Wurtzite‐type Al<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Sc<jats:sub><jats:italic>x</jats:italic></jats:sub>N solid solutions grown by metal organic chemical vapor deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and <jats:italic>x</jats:italic> = 0.15 exhibits a coercive field of 5.5 MV cm<jats:sup>−1</jats:sup> at a measurement frequency of 1.5 kHz. The single crystal quality and homogeneous chemical composition of the film are confirmed by X‐ray diffraction and spectroscopic methods such as time of flight secondary ion mass spectrometry. Annular bright field scanning transmission electron microscopy serves to prove the ferroelectric polarization inversion at the unit cell level. The single crystal quality further allows to image the large‐scale domain pattern of a wurtzite‐type ferroelectric for the first time, revealing a predominantly cone‐like domain shape along the <jats:italic>c</jats:italic>‐axis of the material. As in previous work, this again implies the presence of strong polarization discontinuities along this crystallographic axis, which can be suitable for current transport. The domains are separated by narrow domain walls, for which an upper thickness limit of 3 nm is deduced but which can potentially be atomically sharp. The authors are confident that these results will advance the commencement of the integration of wurtzite‐type ferroelectrics to GaN as well as generally III‐N‐based heterostructures and devices.</jats:p>