| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kirste, Lutz
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (46/46 displayed)
- 2024Understanding Interfaces in AlScN/GaN Heterostructurescitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Coalescence as a key process in wafer-scale diamond heteroepitaxycitations
- 2024Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmospherecitations
- 2024Epitaxial Lateral Overgrowth of Wafer‐Scale Heteroepitaxial Diamond for Quantum Applicationscitations
- 2024Online and Ex Situ Damage Characterization Techniques for Fiber-Reinforced Composites under Ultrasonic Cyclic Three-Point Bendingcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024Ultrasonic reconsolidation of separated CF-PEEK composite layers at 20 kHz — an experimental study on parameter optimization and Ex-situ characterizationcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2024Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2024Understanding interfaces in AlScN/GaN heterostructurescitations
- 2023A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers with Low Channel Thicknesscitations
- 2023Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaNcitations
- 2023Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitridecitations
- 2023AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition with 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHzcitations
- 2023Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxycitations
- 2023Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal-Organic Chemical Vapor Depositioncitations
- 2023Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor depositioncitations
- 2022Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansioncitations
- 2022Leakage mechanism in AlxGa1-xN/GaN heterostructures with AlN interlayercitations
- 2022Rayleigh waves in nonpolar Al0.7Sc0.3N(1120) films with enhanced electromechanical coupling and quality factorcitations
- 2022Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor depositioncitations
- 2022In-situ Detection of Degradation in Power Electronic Modules During Lifetime Testing using Lock-in Thermography
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2021Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor depositioncitations
- 2020In situ approach to fabricate heterojunction p-n CuO-ZnO nanostructures for efficient photocatalytic reactionscitations
- 2020Investigations of the deuterium permeability of as-deposited and oxidized Ti2AlN coatingscitations
- 2020Expitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistorscitations
- 2020Metal-organic chemical vapor deposition of aluminum scandium nitridecitations
- 2020Optimization of metal-organic chemical vapor deposition regrown n-GaN ; Optimization of MOCVD Regrown n-GaNcitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1-xScxN (up to x = 0.41) thin filmscitations
- 2018Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin filmscitations
- 2018Microstructural investigations of polycrystalline Ti2AlN prepared by physical vapor deposition of Ti-AlN multilayerscitations
- 2018A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etchingcitations
- 2018Piezoelectric characterization of Sc0.26Al0.74N layers on Si (001) substratescitations
- 2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devicescitations
- 2018Temperature dependence of the pyroelectric coefficient of AlScN thin filmscitations
- 2016Piezoelectric AlN films for FPW sensors with improved device performancecitations
- 2015Synchrotron white-beam x-ray topography analysis of the defect structure of HVPE-GaN substratescitations
- 2012Diamond nanophotonicscitations
- 2012Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTscitations
- 2010Investigation of stress in AIN thin films for piezoelectric MEMS
- 2009Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An X-ray diffraction study ; Sauerstoff induzierte Verspannungshomogenisierung in AlN Nukleationsschichten und deren Einfluss auf MOVPE GaN Schichten auf Saphir: Eine Röntgendiffraktometrie-Studiecitations
- 2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC ; Röntgentopographie an (Al,Ga)N/GaN basierenden elektronischen Bauelementstrukturen auf SiCcitations
- 2004High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range ; GaInAsN und GaInAsN Quantenfilm-Diodenlaser mit hohen In-Gehalt auf InP-Substrat mit Emissionswellenlängen im Bereich 2,2-2,3 µmcitations
- 2003Wachstum und Realstruktur von epitaktischen (Al,Ga)N-Schichten ; Growth and defectstructure of Epitaxial (Al,Ga)N-Layers
Places of action
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article
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>N
Abstract
<jats:title>Abstract</jats:title><jats:p>Wurtzite‐type Al<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Sc<jats:sub><jats:italic>x</jats:italic></jats:sub>N solid solutions grown by metal organic chemical vapor deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and <jats:italic>x</jats:italic> = 0.15 exhibits a coercive field of 5.5 MV cm<jats:sup>−1</jats:sup> at a measurement frequency of 1.5 kHz. The single crystal quality and homogeneous chemical composition of the film are confirmed by X‐ray diffraction and spectroscopic methods such as time of flight secondary ion mass spectrometry. Annular bright field scanning transmission electron microscopy serves to prove the ferroelectric polarization inversion at the unit cell level. The single crystal quality further allows to image the large‐scale domain pattern of a wurtzite‐type ferroelectric for the first time, revealing a predominantly cone‐like domain shape along the <jats:italic>c</jats:italic>‐axis of the material. As in previous work, this again implies the presence of strong polarization discontinuities along this crystallographic axis, which can be suitable for current transport. The domains are separated by narrow domain walls, for which an upper thickness limit of 3 nm is deduced but which can potentially be atomically sharp. The authors are confident that these results will advance the commencement of the integration of wurtzite‐type ferroelectrics to GaN as well as generally III‐N‐based heterostructures and devices.</jats:p>