| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Lotnyk, Andriy
Leibniz Institute of Surface Engineering
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Cleaning of laser-induced periodic surface structures on copper by gentle wet chemical processingcitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15Ncitations
- 2024In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin filmscitations
- 2024Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>Ncitations
- 2022Control of Layering in Aurivillius Phase Nanocomposite Thin Films and Influence on Ferromagnetism and Optical Absorptioncitations
- 2022Control of magnetoelastic coupling in Ni/Fe multilayers using He+ ion irradiationcitations
- 2021Role of Reaction Intermediate Diffusion on the Performance of Platinum Electrodes in Solid Acid Fuel Cells
- 2021Strongly enhanced and tunable photovoltaic effect in ferroelectric-paraelectric superlattices
- 2021Compositional Patterning in Carbon Implanted Titania Nanotubes
- 2020Phase and grain size engineering in Ge-Sb-Te-O by alloying with La-Sr-Mn-O towards improved material properties
- 2020Biaxially Textured Titanium Thin Films by Oblique Angle Deposition: Conditions and Growth Mechanisms
- 2020Nanocomposites with Three-Dimensional Architecture and Impact on Photovoltaic Effectcitations
- 2020Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
- 2019Influence of substrate dimensionality on the growth mode of epitaxial 3D-bonded GeTe thin films: From 3D to 2D growth
- 2017Ion Beam Assisted Deposition of Thin Epitaxial GaN Filmscitations
- 2017Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
- 2016Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures
- 2016Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation
- 2011Structure and dynamics of the fast lithium ion conductor "li 7La3Zr2O12"
- 2010Development towards MSM active FePd thick films
Places of action
| Organizations | Location | People |
|---|
article
Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al<sub>0.85</sub>Sc<sub>0.15</sub>N
Abstract
<jats:title>Abstract</jats:title><jats:p>Wurtzite‐type Al<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Sc<jats:sub><jats:italic>x</jats:italic></jats:sub>N solid solutions grown by metal organic chemical vapor deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and <jats:italic>x</jats:italic> = 0.15 exhibits a coercive field of 5.5 MV cm<jats:sup>−1</jats:sup> at a measurement frequency of 1.5 kHz. The single crystal quality and homogeneous chemical composition of the film are confirmed by X‐ray diffraction and spectroscopic methods such as time of flight secondary ion mass spectrometry. Annular bright field scanning transmission electron microscopy serves to prove the ferroelectric polarization inversion at the unit cell level. The single crystal quality further allows to image the large‐scale domain pattern of a wurtzite‐type ferroelectric for the first time, revealing a predominantly cone‐like domain shape along the <jats:italic>c</jats:italic>‐axis of the material. As in previous work, this again implies the presence of strong polarization discontinuities along this crystallographic axis, which can be suitable for current transport. The domains are separated by narrow domain walls, for which an upper thickness limit of 3 nm is deduced but which can potentially be atomically sharp. The authors are confident that these results will advance the commencement of the integration of wurtzite‐type ferroelectrics to GaN as well as generally III‐N‐based heterostructures and devices.</jats:p>