| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Schuler, Bruno
Swiss Federal Laboratories for Materials Science and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Influence of rhenium concentration on charge doping and defect formation in MoS 2citations
- 2024Challenges in advancing our understanding of atomic-like quantum systems: Theory and experimentcitations
- 2023Electronic Decoupling and Single‐Molecule Charging of C<sub>60</sub> on h‐BN/Rh(111)citations
- 2023Electronic decoupling and single‐molecule charging of C 60 on h‐BN/Rh(111)citations
- 2023Spin-stabilization by coulomb blockade in a vanadium dimer in WSe 2citations
- 2023Dilute rhenium doping and its impact on defects in MoS 2citations
- 2021Engineering and probing atomic quantum defects in 2D semiconductors: a perspectivecitations
- 2021The role of chalcogen vacancies for atomic defect emission in MoS 2citations
- 2021The role of chalcogen vacancies for atomic defect emission in MoS2citations
- 2020Scalable substitutional Re-doping and its impact on the optical and electronic properties of tungsten diselenidecitations
- 2019Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenidescitations
- 2019Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenidescitations
- 2015Characterizing and identifying single molecules by scanning probe microscopy using functionalized tips
Places of action
| Organizations | Location | People |
|---|
article
Electronic Decoupling and Single‐Molecule Charging of C<sub>60</sub> on h‐BN/Rh(111)
Abstract
<jats:title>Abstract</jats:title><jats:p>A detailed understanding of the interaction between molecules and 2D materials is crucial to implement molecular films into next‐generation 2D material‐organic hybrid devices effectively. In this regard, energy level alignment and charge transfer processes are particularly relevant. This work investigates the interplay between a hexagonal boron nitride (h‐BN) monolayer on an Rh(111) single crystal and self‐assembled C<jats:sub>60</jats:sub> thin films. The influence of the corrugated topography and electrostatic surface potential originating from the h‐BN/Rh(111) Moiré superstructure on the electronic level alignment and charging characteristics of C<jats:sub>60</jats:sub> is being studied. A combination of scanning tunneling microscopy/spectroscopy (STM/STS) and a theoretical tight‐binding approach is used to gain insight into the C<jats:sub>60</jats:sub> bandstructure formation and electronic decoupling of specific C<jats:sub>60</jats:sub>. This decoupling results from adsorption site‐dependent variations of the molecular energy level alignment, which controls the strength of intermolecular hybridization. The decoupling of specific C<jats:sub>60</jats:sub> enables the direct observation of single‐electron charging processes via STS and Kelvin probe force microscopy. The charging of the C<jats:sub>60</jats:sub> is enabled by combining two gating mechanisms: the electrostatic surface potential of the monolayer h‐BN/Rh(111) Moiré and the electric field of the STM tip.</jats:p>