• Nayak, Shashwat
• Nayak, Prakash
• Das, Sabyasachi
• Senanayak, Satyaprasad P.
• Murali, Anna Chandrasekar

Abstract

<jats:title>Abstract</jats:title><jats:p>Development of new n‐type semiconductors with tunable band gap and dielectric constant has significant implication in dissociating bound charge carrier relevant for demonstrating high performance optoelectronic devices. Boron‐β‐thioketonates (MTDKB), analogues to boron‐β‐diketonates containing a sulfur atom in the framework of β‐diketones were synthesized. Bulk transport measurement exhibited an outstanding bulk electron mobility of ≈0.003 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>, which is among the best values reported till date in these class of semiconducting materials and correspondingly a single junction photo responsivity of upto 6 mA W<jats:sup>−1</jats:sup> was obtained. This new family of O,S‐chelated boron compounds exhibited luminescence in the far red/near‐infrared region. The remarkable red shift of 89 nm (fluorescence) observed for <jats:bold>4</jats:bold> <jats:bold>a</jats:bold> in comparison with analogues boron‐β‐diketonate signifies the importance of sulfur in these molecules. MTDKBs with amine functionality have also been investigated as an ON/OFF fluorescent sensor.</jats:p>

Topics

• impedance spectroscopy
• compound
• mobility
• dielectric constant
• semiconductor
• Boron
• amine
• luminescence