| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Senanayak, Satyaprasad P.
University of Cambridge
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Boron‐Thioketonates: A New Class of S,O‐Chelated Boranes as Acceptors in Optoelectronic Devicescitations
- 2023Direct Observation of Contact Reaction Induced Ion Migration and its Effect on Non-Ideal Charge Transport in Lead Triiodide Perovskite Field-Effect Transistors.
- 2022Charge transport in mixed metal halide perovskite semiconductors.
- 2021Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs<sub>2</sub>AgBiBr<sub>6</sub> Thin Filmscitations
- 2020Anisotropy of Charge Transport in a Uniaxially Aligned Fused Electron-Deficient Polymer Processed by Solution Shear Coating.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors.
- 2020How Exciton Interactions Control Spin-Depolarization in Layered Hybrid Perovskitescitations
- 2019Charge extraction via graded doping of hole transport layers gives highly luminescent and stable metal halide perovskite devices.
- 2018Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.
- 2017Understanding charge transport in lead iodide perovskite thin-film field-effect transistorscitations
Places of action
| Organizations | Location | People |
|---|
article
Boron‐Thioketonates: A New Class of S,O‐Chelated Boranes as Acceptors in Optoelectronic Devices
Abstract
<jats:title>Abstract</jats:title><jats:p>Development of new n‐type semiconductors with tunable band gap and dielectric constant has significant implication in dissociating bound charge carrier relevant for demonstrating high performance optoelectronic devices. Boron‐β‐thioketonates (MTDKB), analogues to boron‐β‐diketonates containing a sulfur atom in the framework of β‐diketones were synthesized. Bulk transport measurement exhibited an outstanding bulk electron mobility of ≈0.003 cm<jats:sup>2</jats:sup> V<jats:sup>−1</jats:sup> s<jats:sup>−1</jats:sup>, which is among the best values reported till date in these class of semiconducting materials and correspondingly a single junction photo responsivity of upto 6 mA W<jats:sup>−1</jats:sup> was obtained. This new family of O,S‐chelated boron compounds exhibited luminescence in the far red/near‐infrared region. The remarkable red shift of 89 nm (fluorescence) observed for <jats:bold>4</jats:bold> <jats:bold>a</jats:bold> in comparison with analogues boron‐β‐diketonate signifies the importance of sulfur in these molecules. MTDKBs with amine functionality have also been investigated as an ON/OFF fluorescent sensor.</jats:p>