| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Chemseddine, Abdelkrim
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Planar and Nanostructured n-Si/Metal-Oxide/WO3/BiVO4 Monolithic Tandem Devices for Unassisted Solar Water Splitting
Abstract
A series of planar and nanostructured core-shell photoanodes composed of n-Si/SiO<sub>x</sub>/TiO<sub>2</sub>/WO<sub>3</sub>/BiVO<sub>4</sub> heterojunctions are fabricated by chemical deposition methods. Aerosol-assisted chemical vapor deposition (AA-CVD) is utilized for the large area production of planar SnO<sub>2</sub> and TiO<sub>2</sub> thin films and compact WO<sub>3</sub> nanorods, with the subsequent formation of WO<sub>3</sub>/BiVO<sub>4</sub> core-shell nanostructures via solution deposition. Optimized monolithic dual photoanodes consisting of n-Si/SiO<sub>x</sub>/TiO<sub>2</sub>/WO<sub>3</sub>/BiVO<sub>4</sub>/Fe(Ni)OOH and a Pt cathode as the hydrogen evolution catalyst, provide a combined photo-voltage capable of unassisted solar water splitting with a maximum photocurrent density of 0.3 mA cm<sup>−2</sup> in 1.0 m KB<sub>i</sub> pH 9.3 buffer solution under solar simulated AM 1.5 G illumination. An average faradaic efficiency of ≈98% is confirmed by operando differential electrochemical mass spectroscopy (DEMS) for H<sub>2</sub> production. Solid-state J–V measurements of the individual n-Si/SiO<sub>x</sub> /MO (MO = WO<sub>3</sub>, BiVO<sub>4</sub>, TiO<sub>2</sub>, or SnO<sub>2</sub>) interfaces in the dark and under illumination provide valuable insights into the unfavorable electrical properties at n-Si/SiO<sub>x</sub>/WO<sub>3</sub> or n-Si/SiO<sub>x</sub>/BiVO<sub>4</sub> junctions. The insertion of metal oxide buffer layers, such as SnO<sub>2</sub> and TiO<sub>2</sub>, can mitigate surface recombination at the junctions between n-Si/SiO<sub>x</sub> and WO<sub>3</sub> or BiVO<sub>4</sub> and strongly enhances the overall photovoltage. © 2020 The Authors. Published by Wiley-VCH GmbH.