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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Pérez, Nicolás
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Electrochemical Surface Nanostructuring of Ti<sub>47</sub>Cu<sub>38</sub>Fe<sub>2.5</sub>Zr<sub>7.5</sub>Sn<sub>2</sub>Si<sub>1</sub>Ag<sub>2</sub> Metallic Glass for Improved Pitting Corrosion Resistancecitations
- 2023Grain Boundary Phases in NbFeSb Half‐Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materialscitations
- 2023Enhancing the Thermoelectric Properties via Modulation of Defects in <i>P</i>‐Type MNiSn‐Based (M = Hf, Zr, Ti) Half‐Heusler Materialscitations
- 2020Entropy of Conduction Electrons from Transport Experimentscitations
- 2020Thermoelectric Characterization Platform for Electrochemically Deposited Materials
- 2010Liver and brain imaging through dimercaptosuccinic acid-coated iron oxide nanoparticlescitations
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article
Grain Boundary Phases in NbFeSb Half‐Heusler Alloys: A New Avenue to Tune Transport Properties of Thermoelectric Materials
Abstract
<jats:title>Abstract</jats:title><jats:p>Many thermoelectric materials benefit from complex microstructures. Grain boundaries (GBs) in nanocrystalline thermoelectrics cause desirable reduction in the thermal conductivity by scattering phonons, but often lead to unwanted loss in the electrical conductivity by scattering charge carriers. Therefore, modifying GBs to suppress their electrical resistivity plays a pivotal role in the enhancement of thermoelectric performance, <jats:italic>zT</jats:italic>. In this work, different characteristics of GB phases in Ti‐doped NbFeSb half‐Heusler compounds are revealed using a combination of scanning transmission electron microscopy and atom probe tomography. The GB phases adopt a hexagonal close‐packed lattice, which is structurally distinct from the half‐Heusler grains. Enrichment of Fe is found at GBs in Nb<jats:sub>0.95</jats:sub>Ti<jats:sub>0.05</jats:sub>FeSb, but accumulation of Ti dopants at GBs in Nb<jats:sub>0.80</jats:sub>Ti<jats:sub>0.20</jats:sub>FeSb, correlating to the bad and good electrical conductivity of the respective GBs. Such resistive to conductive GB phase transition opens up new design space to decouple the intertwined electronic and phononic transport in thermoelectric materials.</jats:p>