| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vopson, Melvin Marian
University of Portsmouth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Diamagnetic coupling for magnetic tuning in nano-thin filmscitations
- 2019Sub-lattice polarization states in anti-ferroelectrics and their relaxation processcitations
- 2019Evidence of substrate roughness surface induced magnetic anisotropy in Ni80Fe20 flexible thin filmscitations
- 20171D core-shell magnetoelectric nanocomposites by template-assisted liquid phase depositioncitations
- 2012Probing the local strain-mediated magnetoelectric coupling in multiferroic nanocomposites by magnetic field-assisted piezoresponse force microscopycitations
- 2012Nanostructured p-n junctions for kinetic-to-electrical energy conversioncitations
- 2005Preparation of high moment CoFe films with controlled grain size and coercivitycitations
- 2005Deposition of polycrystalline thin films with controlled grain sizecitations
- 2005Grain size effects in metallic thin films prepared using a new sputtering technology
- 2004Novel sputtering technology for grain-size controlcitations
Places of action
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article
Nanostructured p-n junctions for kinetic-to-electrical energy conversion
Abstract
Piezoelectric ZnO nanorods grown on a flexible substrate are combined with the p-type semiconducting polymer PEDOT:PSS to produce a p-n junction device that successfully demonstrates kinetic-to-electrical energy conversion. Both the voltage and current output of the devices are measured to be in the range of 10 mV and 10 μA cm−2. Combining these figures for the best device gives a maximum possible power density of 0.4 mW cm−3. Systematic testing of the devices is performed showing that the voltage output increases linearly with applied stress, and is reduced significantly by illumination with super-band gap light. This provides strong evidence that the voltage output results from piezoelectric effects in the ZnO. The behavior of the devices is explained by considering the time-dependent changes in band structure resulting from the straining of a piezoelectric material within a p-n junction. It is shown that the rate of screening of the depolarisation field determines the power output of a piezoelectric energy harvesting device. This model is consistent with the behavior of a number of previous devices utilising the piezoelectric effect in ZnO.