| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lehmann, Sebastian
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (28/28 displayed)
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024Microheater Controlled Crystal Phase Engineering of Nanowires Using In Situ Transmission Electron Microscopycitations
- 2024SnS2 Thin Film with In Situ and Controllable Sb Doping via Atomic Layer Deposition for Optoelectronic Applicationscitations
- 2024Low-Temperature ALD of SbOx/Sb2Te3 Multilayers with Boosted Thermoelectric Performancecitations
- 2023Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungstencitations
- 2022Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistorscitations
- 2022Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors
- 2022Aero-TiO2 Prepared on the Basis of Networks of ZnO Tetrapods
- 2022The Role of Al2O3 ALD Coating on Sn-Based Intermetallic Anodes for Rate Capability and Long-Term Cycling in Lithium-Ion Batteriescitations
- 2021Current State-of-the-Art in the Interface/Surface Modification of Thermoelectric Materials
- 2021Vapor-solid-solid growth dynamics in GaAs nanowirescitations
- 2020Non-resonant Raman scattering of wurtzite GaAs and InP nanowirescitations
- 2018Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistorscitations
- 2018Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarizationcitations
- 2018Atomic-resolution spectrum imaging of semiconductor nanowirescitations
- 2017Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2017Thermodynamic stability of gold-assisted InAs nanowire growthcitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2017Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffractioncitations
- 2016Can antimonide-based nanowires form wurtzite crystal structure?citations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
- 2009Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devicescitations
Places of action
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article
Chalcopyrite Semiconductors for Quantum Well Solar Cells
Abstract
<p>The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se2 in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe2 and CuGaSe2 were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe2 layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells.</p>