| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sadewasser, Sascha
International Iberian Nanotechnology Laboratory
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Towards All-Non-Vacuum-Processed Photovoltaic Systems: A Water-Based Screen-Printed Cu(In,Ga)Se2 Photoabsorber with a 6.6% Efficiencycitations
- 2021Novel Polymorph of GaSecitations
- 2021Efficient reSe2 photodetectors with CVD single-crystal graphene contactscitations
- 2021Scanning Transmission Electron Microscopy Investigations of an Efficiency Enhanced Annealed Cu(In1-xGax)Se2 Solar Cells with Sputtered Zn(O,S) Buffer Layer
- 2019Micro-Solar Cells By Electrodeposition into a Microelectrode Array – Effect of Dot Diameter
- 2019Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries
- 2018Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layercitations
- 2017CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
- 2017Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxycitations
- 2017Cd and Cu Interdiffusion in Cu(In, Ga)Se2/CdS Hetero-Interfaces
- 2012Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
- 2012Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
- 2011Chalcopyrite Semiconductors for Quantum Well Solar Cellscitations
- 2010Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materialscitations
Places of action
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article
Chalcopyrite Semiconductors for Quantum Well Solar Cells
Abstract
<p>The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se2 in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe2 and CuGaSe2 were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe2 layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells.</p>