| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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García Núñez, Carlos
University of Glasgow
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Giant piezoelectric effect induced by porosity in inclined ZnO thin filmscitations
- 2024Optical and structural properties of silicon nitride thin films deposited by plasma enhanced chemical vapor deposition for high reflectance optical mirrors
- 2024Giant Piezoelectric Effect Induced by Porosity in Inclined ZnO Thin Filmscitations
- 2021Glancing angle deposition of nanostructured ZnO films for ultrasonicscitations
- 2019Graphene–graphite polyurethane composite based high‐energy density flexible supercapacitorscitations
- 2018Electronic skin with energy autonomy and distributed neural data processing
- 2018A novel growth method to improve the quality of GaAs nanowires grown by Ga-assisted chemical beam epitaxycitations
- 2017Metal-assisted chemical etched Si nanowires for high-performance large area flexible electronics
- 2016Fabrication and characterization of multiband solar cells based on highly mismatched alloys
- 2015Contribution to the Development of Electronic Devices Based on Zn3N2 Thin Films, and ZnO and GaAs Nanowires
- 2013p-type CuO nanowire photodetectors
- 2013Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn3N2 sputtered filmscitations
- 2013WO3 nanoparticle-functionalized nanowires for NOx sensing
- 2011Effect of the deposition temperature on the properties of Zn3N2 layers grown by rf magnetron sputtering
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article
Giant piezoelectric effect induced by porosity in inclined ZnO thin films
Abstract
Piezoceramics have been the common choice for sensing applications, however their integration with other electronics is limited due to their large size. Also, environmental concerns have been limiting the use of ceramics due to their lead content, toxic for humans. Piezoelectric crystalline thin films have arisen as alternative materials offering compatibility with miniaturization and integrated processes, though their piezoelectric properties are low (d<sub>33</sub> < 15 pC N<sup>−1</sup>) compared to ceramics (d<sub>33</sub> > 300 pC N<sup>−1</sup>), hindering their applicability. Several methods have been studied aiming to improve the piezoelectric output of thin films, including doping or the less investigated inclusion of porosity. However, they all require complex techniques that increase the cost. In this work, a giant electromechanical d33 coefficient of 115.6 pC N<sup>−1</sup> has been obtained inducing porosity in inclined ZnO thin films via oblique angle deposition, which is beyond record values reported for doped ZnO thin films and an order of magnitude higher than standard ZnO thin films (11.6 pC N<sup>2400138</sup>). Morphology, composition, crystal structure, porosity, and piezoelectricity are reported for standard and inclined films. Finite element simulations have been carried out to investigate the performance of the piezoelectric-enhanced thin films in an ultrasonic pulse-echo setup.