• Musselman, Kevin P.
• Asgarimoghaddam, Hatameh
• Aljaghtham, Mutabe
• Ali, Alrasheed
• Delumeau, Louisvincent
• Yavuz, Mustafa
• Nguyen, Viet Huong
• Ozyigit, Dogu
• Alamry, Ali

Abstract

<jats:title>Abstract</jats:title><jats:p>Metal‐insulator‐insulator‐metal (MIIM) diodes with thickness‐gradient films for the insulator layers are fabricated for the first time. Spatially varying atmospheric‐pressure chemical vapor deposition is used to deposit ZnO and Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films with orthogonal gradient directions, producing 414 MIIM diodes with 414 different ZnO/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> film‐thickness combinations on a single substrate for combinatorial and high‐throughput optimization. The nm‐scale ZnO/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> films are printed in only 2 min and the entire device fabrication takes 7 h, which is much less than conventional approaches for investigating many insulator‐thickness combinations. Rapid identification of the optimal thickness combination is demonstrated; high‐performance diodes (asymmetry = 227, nonlinearity = 13.1, and responsivity = 12 A/W) are observed when a trap‐assisted tunneling mechanism is dominant for insulator thicknesses of 3.4–4.4 nm (ZnO) and 7.4 nm (Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>).</jats:p>

Topics

• impedance spectroscopy
• laser emission spectroscopy
• chemical vapor deposition
• atomic layer deposition