| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cecchini, Raimondo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Glassy Synaptic Time Dynamics in Molecular La0.7Sr0.3MnO/Gaq3/AlOx/Co Spintronic Crossbar Devicescitations
- 2021Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Siliconcitations
- 2021Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
- 2021Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Depositioncitations
- 2021Large-Area {MOVPE} Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)citations
- 2019High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growthcitations
- 2018Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVDcitations
- 2018Oxygen impurities link bistability and magnetoresistance in organic spin valvescitations
- 2010Fabrication of nanopatterned metal layers on silicon by nanoindentation/nanoscratching and electrodepositioncitations
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article
Glassy Synaptic Time Dynamics in Molecular La0.7Sr0.3MnO/Gaq3/AlOx/Co Spintronic Crossbar Devices
Abstract
The development of neuromorphic devices is a pivotal step in the pursuit of low‐power artificial intelligence. A synaptic analog is one of the building blocks of this vision. The synaptic behavior of molecular La0.7/Sr0.3/MnO3/tris(8‐hydroxyquinolinato)gallium/AlOx/Co spintronic devices is studied, where the conductance plays the role of the synaptic weight. These devices are arranged in a crossbar configuration, the most effective architecture for the purpose. The conductance of each cross point is controlled separately by the application of voltage pulses: when set in the high conductance potentiated state, the devices show a spin‐valve magnetoresistance, while in the low conductance depressed state, no magnetoresistance is observed. The time dependence of the resistive switching behavior is an important parameter of the synaptic behavior and is very revealing of the underlying physical mechanisms. To study the time dynamics of the resistive switching after the voltage pulses, the response of the device to trains of potentiation and depression pulses, and the time‐resolved conductivity relaxation after the pulses are measured. The results are described with the conductivity model based on impurity energy levels in the organic semiconductor's gap. A flat distribution of the activation energies necessary to move these impurities is hypothesized, which can explain the observed glassy behavior.