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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wenger, Christian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
- 2024Lateral Mn$_5$Ge$_3$ spin-valve in contact with a high-mobility Ge two-dimensional hole gas
- 2024High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Densitycitations
- 2023Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells
- 2023Neuromorphic Circuits with Redox-Based Memristive Devices
- 2022Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
- 2020Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switchingcitations
- 2020In-Vitro Classification of Saliva Samples of COPD Patients and Healthy Controls Using Machine Learning Tools
- 2017Radio Frequency CMOS Chem-bio Viscosity Sensors based on Dielectric Spectroscopy
- 2015Residual metallic contamination of transferred chemical vapor deposited graphene
Places of action
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article
High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Density
Abstract
<p>Hot electron transistors (HETs) represent an exciting new device for integration into semiconductor technology, holding the promise of high-frequency electronics beyond the limits of SiGe bipolar hetero transistors. With the exploration of 2D materials such as graphene and new device architectures, hot electron transistors have the potential to revolutionize the landscape of modern electronics. This study highlights a novel hot electron transistor structure with a record output current density of 800 A cm<sup>−</sup><sup>2</sup> and a high current gain α, fabricated using a scalable fabrication approach. The hot electron transistor structure comprises 2D hexagonal boron nitride and graphene layers wet transferred to a germanium substrate. The combination of these materials results in exceptional performance, particularly in terms of the highly saturated output current density. The scalable fabrication scheme used to produce the hot electron transistor opens up opportunities for large-scale manufacturing. This breakthrough in hot electron transistor technology holds promise for advanced electronic applications, offering high current capabilities in a practical and manufacturable device.</p>