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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bruno, Annalisa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Recent developments in low-dimensional heterostructures of halide perovskites and metal chalcogenides as emergent materials: Fundamental, implementation, and outlookcitations
- 2023Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistorscitations
- 2023Light-emitting field-effect transistors (LET) based on metal halide perovskitescitations
- 2022Amplified Spontaneous Emission Threshold Dependence on Determination Method in Dye-Doped Polymer and Lead Halide Perovskite Waveguidescitations
- 2022Amplified spontaneous emission threshold dependence on determination method in dye-doped polymer and lead halide perovskite waveguidescitations
- 2020Potassium Acetate-Based Treatment for Thermally Co-Evaporated Perovskite Solar Cellscitations
- 2020Mixed-Dimensional Naphthylmethylammonium-Methylammonium Lead Iodide Perovskites with Improved Thermal Stabilitycitations
- 2018Engineering the Emission of Broadband 2D Perovskites by Polymer Distributed Bragg Reflectorscitations
- 2016X-ray Scintillation in Lead Halide Perovskite Crystalscitations
- 2013Preparation and characterization of novel nanocomposites of WS2nanotubes and polyfluorene conductive polymercitations
- 2013Microscopic and spectroscopic investigation of MoS2nanotubes/P3HT nanocompositescitations
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article
Asynchronous Charge Carrier Injection in Perovskite Light-Emitting Transistors
Abstract
<p>Unbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light-emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier injection and enhance electroluminescence of perovskite light-emitting transistors by independent control of drain–source and gate–source bias voltages to compensate for space-charge effects. Optimization of bias pulse synchronization induces a fourfold enhancement of the emission intensity. Interestingly, the optimal phase delay between biasing pulses depends on modulation frequency due to the capacitive nature of the devices, which is well captured by numerical simulations of an equivalent electrical circuit. These results provide new insights into the electroluminescence dynamics of AC-driven perovskite light-emitting transistors and demonstrate an effective strategy to optimize device performance through independent control of the amplitude, frequency, and phase of the biasing pulses.</p>