| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Catalan, Gustau
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Photostrictive Actuators Based on Freestanding Ferroelectric Membranescitations
- 2024Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films
- 2023Enhanced photostrictive actuation in freestanding ferroelectric membranes
- 2022Effect of humidity on the writing speed and domain wall dynamics of ferroelectric domainscitations
- 2022Effect of Humidity on the Writing Speed and Domain Wall Dynamics of Ferroelectric Domainscitations
- 2021Strong strain gradients and phase coexistence at the metal-insulator transition in VO2 epitaxial filmscitations
- 2021Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO3Thin Film Deposited in a Composition-Spread Geometrycitations
- 2021Non-linear nanoscale piezoresponse of single ZnO nanowires affected by piezotronic effect
- 2020Control of lateral composition distribution in graded films of soluble solid systems A1-xBx by partitioned dual-beam pulsed laser depositioncitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO 3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2017Domain wall magnetoresistance in BiFeO₃ thin films measured by scanning probe microscopy
- 2016Above-Bandgap Photovoltages in Antiferroelectricscitations
- 2016A flexoelectric microelectromechanical system on siliconcitations
- 2009Effect of chemical substitution on the Neacuteel temperature of multiferroic Bi1-xCaxFeO3citations
Places of action
| Organizations | Location | People |
|---|
article
Effect of Humidity on the Writing Speed and Domain Wall Dynamics of Ferroelectric Domains
Abstract
The switching dynamics of ferroelectric polarization under electric fields depends on the availability of screening charges in order to stabilize the switched polarization. In ferroelectrics, thin films with exposed surfaces investigated by piezoresponse force microscopy (PFM), the main source of external screening charges is the atmosphere and the water neck, and therefore relative humidity (RH) plays a major role. Here, it is shown how the dynamic writing of domains in BaTiO3 thin films changes by varying scanning speeds in the range of RH between 2.5% and 60%. The measurements reveal that the critical speed for domain writing, which is defined as the highest speed at which electrical writing of a continuous stripe domain is possible, increases non-monotonically with RH. Additionally, the width of line domains shows a power law dependence on the writing speed, with a growth rate coefficient decreasing with RH. The size of the written domains at a constant speed as well as the creep-factor μ describing the domain wall kinetics follow the behavior of water adsorption represented by the adsorption isotherm, indicating that the screening mechanism dominating the switching dynamics is the thickness and the structure of adsorbed water structure and its associated dielectric constant and ionic mobility.