| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Greenacre, Victoria
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 2022Tungsten(VI) selenide tetrachloride, WSeCl 4 - synthesis, properties, coordination complexes and application of [WSeCl 4 (SenBu 2 )] for CVD growth of WSe 2 thin filmscitations
- 2021Electrodeposited WS 2 monolayers on patterned graphenecitations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2021Lateral growth of MoS 2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Large-area electrodeposition of few-layer MoS 2 on graphene for 2D material heterostructurescitations
- 2020Electrodeposition of MoS2 from dichloromethanecitations
- 2020Improved thermoelectric performance of Bi 2 Se 3 alloyed Bi 2 Te 3 thin films via low pressure chemical vapour depositioncitations
Places of action
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article
Lateral growth of MoS2 2D material semiconductors over an insulator via electrodeposition
Abstract
<p>Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS<sub>2</sub>) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS<sub>2</sub> 2D films grown from TiN electrodes across opposite sides are connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS<sub>2</sub> is shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS<sub>2</sub> layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way toward room temperature, scalable, and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices.</p>