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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wenger, Christian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
- 2024Lateral Mn$_5$Ge$_3$ spin-valve in contact with a high-mobility Ge two-dimensional hole gas
- 2024High Gain Graphene Based Hot Electron Transistor with Record High Saturated Output Current Densitycitations
- 2023Effect of downsizing and metallization on switching performance of ultrathin hafnium oxide memory cells
- 2023Neuromorphic Circuits with Redox-Based Memristive Devices
- 2022Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
- 2020Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switchingcitations
- 2020In-Vitro Classification of Saliva Samples of COPD Patients and Healthy Controls Using Machine Learning Tools
- 2017Radio Frequency CMOS Chem-bio Viscosity Sensors based on Dielectric Spectroscopy
- 2015Residual metallic contamination of transferred chemical vapor deposited graphene
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article
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
Abstract
<jats:title>Abstract</jats:title><jats:p>This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming‐free devices, but also decreases the voltage operation window of switching, thereby reducing intra‐device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi‐gradual switching both for the set and reset processes, as strongly desired for multi‐bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano‐constriction including asymmetric potential drops at the electrodes and non‐linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.</jats:p>