| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Alff, Lambert
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024{001}-textured Pb(Zr, Ti)O₃ thin films on stainless steel by pulsed laser deposition
- 2023Operando two-terminal devices inside a transmission electron microscopecitations
- 2023Tailoring Optical Properties in Transparent Highly Conducting Perovskites by Cationic Substitutioncitations
- 2023Role of kinetic energy on Nb3Sn thin films by low-temperature co-sputtering
- 2022Evidence for antipolar displacements in NaNbO3 thin filmscitations
- 2021Modification of energy band alignment and electric properties of Pt/Ba₀.₆Sr₀.₄TiO₃/Pt thin-film ferroelectric varactors by Ag impurities at interfaces
- 2021Optical Plasmon Excitation in Transparent Conducting SrNbO3 and SrVO3 Thin Films
- 2021Charge-transfer driven ferromagnetism in a disordered three-dimensional 3d-5d spin system
- 2020Kinetically induced low-temperature synthesis of Nb3Sn thin filmscitations
- 2020Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switchingcitations
- 2014High-temperature stability and saturation magnetization of superparamagnetic nickel nanoparticles in microporous polysilazane-derived ceramics and their gas permeation propertiescitations
Places of action
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article
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
Abstract
<jats:title>Abstract</jats:title><jats:p>This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide‐based resistive random‐access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming‐free devices, but also decreases the voltage operation window of switching, thereby reducing intra‐device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi‐gradual switching both for the set and reset processes, as strongly desired for multi‐bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano‐constriction including asymmetric potential drops at the electrodes and non‐linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.</jats:p>