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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Branquinho, Rita
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductorscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2022A Comparison between Solution-Based Synthesis Methods of ZrO2 Nanomaterials for Energy Storage Applicationscitations
- 2020Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistorcitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Solution combustion synthesis of transparent conducting thin films for sustainable photovoltaic applicationscitations
- 2020Solution combustion synthesis of transparent conducting thin films for sustainable photovoltaic applicationscitations
- 2020Piezoelectricity Enhancement of Nanogenerators Based on PDMS and ZnSnO3 Nanowires through Microstructurationcitations
- 2019Tailoring IGZO composition for enhanced fully solution-based thin film transistorscitations
- 2018Boosting highly transparent and conducting indium zinc oxide thin films through solution combustion synthesis: Influence of rapid thermal annealingcitations
- 2016UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistorscitations
- 2016FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
- 2015A combination of solution synthesis solution combustion synthesis for highly conducting and transparent Aluminum Zinc Oxide thin filmscitations
- 2014Aqueous Combustion Synthesis of Aluminum Oxide Thin Films and Application as Gate Dielectric in GZTO Solution-based TFTscitations
- 2013Preparation and characterization of cellulose nanocomposite hydrogels as functional electrolytescitations
- 2008Adsorption and catalytic properties of SiO2/Bi2S3 nanocomposites on the methylene blue photodecolorization processcitations
Places of action
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article
Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectric
Abstract
<p>Lately, printed oxide electronics have advanced in the performance and low-temperature solution processability that are required for the dawn of low-cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra-thin high-κ aluminum-oxide dielectric with a high-throughput (50 m min<sup>−1</sup>) flexographic printing is accomplished while simultaneously demonstrating low-temperature processing (≤200 °C). Thermal annealing is combined with low-wavelength far-ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high-κ dielectric exhibits a very low leakage-current density (10<sup>−10</sup> A cm<sup>−2</sup>) at 1 MV cm<sup>−1</sup>, a breakdown field higher than 1.75 MV cm<sup>−1</sup>, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, a subthreshold slope <80 mV dec<sup>−1</sup>, and a current ON/OFF ratio >10<sup>6</sup>. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.</p>