| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kiazadeh, Asal
Universidade Nova de Lisboa
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applicationscitations
- 2024Inkjet printed IGZO memristors with volatile and non-volatile switchingcitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 20202D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodescitations
- 2019Electrochemical metallization ReRAMs (ECM) - Experiments and modellingcitations
- 2019Flexible and transparent ReRAM devices for system on panel (SOP) applicationcitations
- 2017Memristors using solution-based IGZO nanoparticlescitations
- 2017Memristors Using Solution-Based IGZO Nanoparticlescitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
- 2016UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistorscitations
- 2016FUV-assisted low temperature AlOx solution based dielectric for oxide TFTs
- 2016Substrate reactivity as the origin of Fermi level pinning at the Cu2O/ALD-Al2O3 interfacecitations
- 2013Fabrication and characterization of memory devices based on nanoparticles
- 2012Electroforming process in metal-oxide-polymer resistive switching memories
Places of action
| Organizations | Location | People |
|---|
article
2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes
Abstract
<p>A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smooth area-dependent switching over two orders of magnitude, which conserves the current rectification and allows for analog control over the resistance states (dependence of device history and applied voltage stimuli). This secondary mechanism involves ion exchange or charge trapping at the Schottky interface without a contribution from the bulk (hence, it is termed 2D), which is reported for the first time for an amorphous oxide semiconductor switching matrix.</p>