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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bobbert, Peter A.
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2021Dopant Network Processing Units: Towards Efficient Neural-network Emulators with High-capacity Nanoelectronic Nodescitations
- 2019Short-channel vertical organic field-effect transistors with high on/off ratioscitations
- 2018Simulating phase separation during spin coating of a polymer–fullerene blendcitations
- 2018Simulating phase separation during spin coating of a polymer–fullerene blend:a joint computational and experimental investigationcitations
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article
Short-channel vertical organic field-effect transistors with high on/off ratios
Abstract
A unique vertical organic field-effect transistor structure in which highly doped silicon nanopillars are utilized as a gate electrode is demonstrated. An additional dielectric layer, partly covering the source, suppresses bulk conduction and lowers the OFF current. Using a semiconducting polymer as active channel material, short-channel (100 nm) transistors with ON/OFF current ratios up to 10 6 are realized. The electronic behavior is explained using space-charge and contact-limited current models and numerical simulations. The current density and switching speed of the devices are in the order of 0.1 A cm −2 and 0.1 MHz, respectively, at biases of only a few volts. These characteristics make the devices very promising for applications where large current densities, high switching speeds, and high ON/OFF ratios are required.