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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Casati, R. |
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Kočí, Jan | Prague |
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Azam, Siraj |
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Ali, M. A. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jin, Lim Han
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article
Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties
Abstract
Although high-quality graphene can be produced on catalyst metals, their practical applications, especially Si technologies, are limited by the high-temperature growth and the posttransfer process. A high-performance system composed of W/nanocrystalline graphene (nc-G)/TiN is realized for the long-term downscaling of interconnect technology. The nc-G is directly grown on noncatalytic TiN, up to 300 mm in diameter, at a low temperature of approximate to 560 degrees C,which is below the complementary metal-oxide semiconductor integration temperature. The versatile roles of nc-G in the interconnect are demonstrated: as a promoter of the preferential grain growth of the W layer, as a diffusion barrier to metal-silicide formation, and as a proper adhesion layer with adjacent layers. Overall, a significant reduction (27%) in the resistance of the interconnect is achieved by the insertion of nc-G between W and TiN. This work points to the possibility of practical graphene applications via direct nc-G growth that is compatible with current Si technology.