Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2018Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties19citations

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Chart of shared publication
Eun-Kyu, Lee
1 / 1 shared
Yongsung, Kim
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Wonhee, Ko
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Seongjun, Park
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Kyung-Eun, Byun
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Shin, Hyeon-Jin
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Wook, Shin Keun
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Hyun-Jae, Song
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Hyun, Park
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Dong-Hyun, Im
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Yeon, Won Jung
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Chang-Seok, Lee
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Jae-Ho, Lee
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Chart of publication period
2018

Co-Authors (by relevance)

  • Eun-Kyu, Lee
  • Yongsung, Kim
  • Wonhee, Ko
  • Seongjun, Park
  • Kyung-Eun, Byun
  • Shin, Hyeon-Jin
  • Wook, Shin Keun
  • Yeonchoo, Cho
  • Gwan, Chung Jae
  • Hyun-Jae, Song
  • Hyangsook, Lee
  • Hyun, Park
  • Changhyun, Kim
  • Dong-Hyun, Im
  • Yeon, Won Jung
  • Chang-Seok, Lee
  • Jae-Ho, Lee
OrganizationsLocationPeople

article

Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties

  • Eun-Kyu, Lee
  • Yongsung, Kim
  • Wonhee, Ko
  • Jin, Lim Han
  • Seongjun, Park
  • Kyung-Eun, Byun
  • Shin, Hyeon-Jin
  • Wook, Shin Keun
  • Yeonchoo, Cho
  • Gwan, Chung Jae
  • Hyun-Jae, Song
  • Hyangsook, Lee
  • Hyun, Park
  • Changhyun, Kim
  • Dong-Hyun, Im
  • Yeon, Won Jung
  • Chang-Seok, Lee
  • Jae-Ho, Lee
Abstract

Although high-quality graphene can be produced on catalyst metals, their practical applications, especially Si technologies, are limited by the high-temperature growth and the posttransfer process. A high-performance system composed of W/nanocrystalline graphene (nc-G)/TiN is realized for the long-term downscaling of interconnect technology. The nc-G is directly grown on noncatalytic TiN, up to 300 mm in diameter, at a low temperature of approximate to 560 degrees C,which is below the complementary metal-oxide semiconductor integration temperature. The versatile roles of nc-G in the interconnect are demonstrated: as a promoter of the preferential grain growth of the W layer, as a diffusion barrier to metal-silicide formation, and as a proper adhesion layer with adjacent layers. Overall, a significant reduction (27%) in the resistance of the interconnect is achieved by the insertion of nc-G between W and TiN. This work points to the possibility of practical graphene applications via direct nc-G growth that is compatible with current Si technology.

Topics
  • impedance spectroscopy
  • grain
  • semiconductor
  • tin
  • grain growth
  • silicide