| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lichtensteiger, Céline
Universidad de Cantabria
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Direct imaging of the magnetoelectric coupling in multiferroic BaTiO3/La0.9Ba0.1MnO3citations
- 2023Mapping the complex evolution of ferroelastic/ferroelectric domain patterns in epitaxially strained PbTiO3 heterostructurescitations
- 2021Microstructure of epitaxial Mg3N2 thin films grown by MBEcitations
- 2021Epitaxial Zn3N2 thin films by molecular beam epitaxy: Structural, electrical, and optical propertiescitations
- 2020Full control of polarization in ferroelectric thin films using growth temperature to modulate defectscitations
- 2019Strain-engineering Mott-insulating La2CuO4citations
- 2016Positive effect of an internal depolarization field in ultrathin epitaxial ferroelectric filmscitations
- 2016Positive Effect of an Internal Depolarization Field in Ultrathin Epitaxial Ferroelectric Filmscitations
- 2009Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3citations
- 2007Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0.67Sr0.33MnO3 electrodescitations
Places of action
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article
Positive Effect of an Internal Depolarization Field in Ultrathin Epitaxial Ferroelectric Films
Abstract
<jats:p>The effect of intentionally introducing a large depolarization field in (001)‐oriented, epitaxial Pb(Zr<jats:sub>0.2</jats:sub>TiO<jats:sub>0.8</jats:sub>)O<jats:sub>3</jats:sub> (PZT) ultrathin films grown on La<jats:sub>0.67</jats:sub>Sr<jats:sub>0.33</jats:sub>MnO<jats:sub>3</jats:sub> (LSMO) buffered SrTiO<jats:sub>3</jats:sub> (STO) substrates is investigated. Inserting between 3 and 10 unit cells of STO between two 3 nm thick PZT films significantly influences the out‐of‐plane (<jats:italic>c</jats:italic>) lattice constant as well as the virgin domain state. Piezoresponse force microscopy images reveal a nanoscale (180°) polydomain structure in these films. In comparison, a “reference” single layer PZT sample (6 nm thick without STO spacer) exhibits an elongated PZT <jats:italic>c</jats:italic>‐axis (0.416 nm) and is preferentially “down”‐polarized with large regions of monodomain contrast. It shows asymmetric switching loops (i.e., imprint) coupled with sluggish domain switching under external bias. It is shown that the insertion of STO drives a monodomain to 180° polydomain transition in the as‐grown state, which reduces the imprint by 80%. The insertion of the STO also profoundly improves dielectric leakage and hence the distribution of the applied electric field. Consequently, the critical pulse duration of the electric field required to initiate domain switching is reduced by two orders of magnitude relative to the reference sample. These results demonstrate the possibility of manipulating the depolarization field in such a way that it has positive effects on the ferroelectric behavior of ultrathin PZT films.</jats:p>