| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bauer, Ernst
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge Statescitations
- 2022Thermoelectric properties of Cu‐Doped Heusler compound Fe<sub>2‐<i>x</i></sub>Cu<sub><i>x</i></sub>VAlcitations
- 2021Properties of HPT-Processed Large Bulks of p-Type Skutterudite DD0.7Fe3CoSb12 with ZT > 1.3citations
- 2017Pressure-induced anomalous valence crossover in cubic YbCu5-based compoundscitations
- 2017Finite size effect on the structural and magnetic properties of MnAs/GaAs(001) patterned microstructures thin filmscitations
- 2014Growth, reaction and nanowire formation of Fe on the ZnS(100) surfacecitations
- 2012Spinodal decomposition in (CaxBa1-x)(y)Fe4Sb12citations
- 2007Magnetostructure of MnAs on GaAs revisitedcitations
- 2004Head-to-head domain-wall phase diagram in mesoscopic ring magnetscitations
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article
Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States
Abstract
<jats:title>Abstract</jats:title><jats:p>Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco‐friendly constituting elements. Here, adopting a unique synthesis route via chemical co‐precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( 21.5 µW cm<jats:sup>−1</jats:sup> K<jats:sup>−2</jats:sup> and 0.5 at 1100 K in ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi‐dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.</jats:p>