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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Novitskii, Andrei
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Publications (4/4 displayed)
- 2024Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge Statescitations
- 2021Ultralow Thermal Conductivity in Dual-Doped n-Type Bi2Te3 Material for Enhanced Thermoelectric Propertiescitations
- 2021Effective decoupling of seebeck coefficient and the electrical conductivity through isovalent substitution of erbium in bismuth selenide thermoelectric materialcitations
- 2021Effective decoupling of seebeck coefficient and the electrical conductivity through isovalent substitution of erbium in bismuth selenide thermoelectric materialcitations
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article
Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States
Abstract
<jats:title>Abstract</jats:title><jats:p>Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco‐friendly constituting elements. Here, adopting a unique synthesis route via chemical co‐precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( 21.5 µW cm<jats:sup>−1</jats:sup> K<jats:sup>−2</jats:sup> and 0.5 at 1100 K in ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi‐dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.</jats:p>