| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Krogstrup, Peter
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2023Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowirescitations
- 2022Tuning lower dimensional superconductivity with hybridization at a superconducting-semiconducting interfacecitations
- 2022Doubling the mobility of InAs/InGaAs selective area grown nanowirescitations
- 2021Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfacescitations
- 2021Andreev Modes from Phase Winding in a Full-Shell Nanowire-Based Transmoncitations
- 2021Magnetic-Field-Compatible Superconducting Transmon Qubitcitations
- 2020Anomalous metallic phase in tunable destructive superconductorscitations
- 2020Destructive Little-Parks Effect in a Full-Shell Nanowire-Based Transmoncitations
- 2020Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfacescitations
- 2020Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structurecitations
- 2018Field effect enhancement in buffered quantum nanowire networkscitations
- 2016Ag-catalyzed InAs nanowires grown on transferable graphite flakescitations
- 2016Majorana bound states in a coupled quantum-dot hybrid-nanowire systemcitations
- 2015Hard gap in epitaxial semiconductor-superconductor nanowirescitations
- 2013Low temperature transport in p-doped InAs nanowirescitations
- 2012Dynamical theory and experiments on GaAs nanowire growth for photovoltaic applications
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article
Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces
Abstract
<p>The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.</p>