| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Capellini, Giovanni
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Full Picture of Lattice Deformation in a Ge<sub>1 − x</sub>Sn<sub>x</sub> Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxycitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024Full Picture of Lattice Deformation in a Ge 1-x Sn x Micro‐Disk by 5D X‐ray Diffraction Microscopycitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THzcitations
- 2024The Lattice Strain Distribution in GexSn1-x Micro-Disks Investigated at the Sub 100-nm Scale
- 2023Terahertz subwavelength sensing with bio-functionalized germanium fano-resonators
- 2023Isothermal Heteroepitaxy of Ge1-xSnx Structures for Electronic and Photonic Applicationscitations
- 2023Isothermal Heteroepitaxy of Ge 1- x Sn x Structures for Electronic and Photonic Applicationscitations
- 2022Terahertz subwavelength sensing with bio-functionalized germanium fano-resonatorscitations
- 2022Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputteringcitations
- 2022Biocompatibility and antibacterial properties of TiCu(Ag) thin films produced by physical vapor deposition magnetron sputteringcitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2018Morphological evolution of Ge/Si nano-strips driven by Rayleigh-like instabilitycitations
- 2018Antiphase boundaries in InGaP/SiGe/Si : structural and optical properties
- 2018Photoluminescence from GeSn nano-heterostructurescitations
- 2017Fully coherent Ge islands growth on Si nano-pillars by selective epitaxycitations
- 2017Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructurescitations
- 2017Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPEcitations
- 2016Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillarscitations
- 2015Engineered coalescence by annealing 3D Ge microstructures into high-quality suspended layers on Sicitations
- 2015CMOS-compatible optical switching concept based on strain-induced refractive-index tuning
- 2007GeSi Intermixing in Ge Nanostructures on Si(111): An XAFS versus STM Studycitations
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article
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Abstract
Growth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers. ; publishedVersion