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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Denneulin, Thibaud
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024Direct observation of altermagnetic band splitting in CrSb thin filmscitations
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS 3 /Fe 3 GeTe 2 van der Waals Heterostructurescitations
- 2024Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
- 2024Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals Heterostructurescitations
- 2023Current-driven writing process in antiferromagnetic Mn2Au for memory applicationscitations
- 2023Large Interfacial Rashba Interaction Generating Strong Spin–Orbit Torques in Atomically Thin Metallic Heterostructurescitations
- 2023Large interfacial Rashba interaction and resultant dominating field- like torque in atomically thin metallic heterostructurescitations
- 2023Role of heterophase interfaces on local coercivity mechanisms in the magnetic Al0.3CoFeNi complex concentrated alloycitations
- 2021Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloycitations
- 2020Ferroelectric State in an α-Nd 2 WO 6 Polymorph Stabilized in a Thin Filmcitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO 3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2020Temperature-independent giant dielectric response in transitional BaTiO3 thin filmscitations
- 2019Structural and chemical investigation of interface related magnetoelectric effect in Ni/BiFe0.95Mn0.05O3 heterostructurescitations
- 2018Advanced GeSn/SiGeSn Group IV Heterostructure Laserscitations
- 2017Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopycitations
- 2016Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscopecitations
- 2015HRTEM Studies of Stress Assisted Sintered BaLa4Ti4O15citations
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article
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Abstract
Growth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers. ; publishedVersion