| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cueff, Sébastien
Institut des Nanotechnologies de Lyon
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Subpicosecond Spectroscopic Ellipsometry of the Photoinduced Phase Transition in VO 2 Thin Filmscitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb<sub>2</sub>S<sub>3</sub> Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2023Efficient Optimization of High‐Quality Epitaxial Lithium Niobate Thin Films by Chemical Beam Vapor Deposition: Impact of Cationic Stoichiometrycitations
- 2020Single artificial atoms in silicon emitting at telecom wavelengthscitations
- 2019Perovskite-oxide based hyperbolic metamaterialscitations
- 2019Vanadium Oxide Based Waveguide Modulator Integrated on Silicon
- 2015Modeling the anisotropic electro-optic interaction in hybrid silicon-ferroelectric optical modulatorcitations
- 2012Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ionscitations
- 2012Electrically tailored resistance switching in silicon oxidecitations
Places of action
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article
Reversible Single‐Pulse Laser‐Induced Phase Change of Sb<sub>2</sub>S<sub>3</sub> Thin Films: Multi‐Physics Modeling and Experimental Demonstrations
Abstract
<jats:title>Abstract</jats:title><jats:p>Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and near‐infrared. Controlling the local and reversible phase transition in this material is of major importance for future applications, and an appealing method to do so is to exploit pulsed lasers. Yet, the physics and limits involved in the optical switching of Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> are not yet well understood. Here, the reversible laser‐induced phase transition of Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> is investigated, focusing specifically on the mechanisms that drive the optically induced amorphization, with multi‐physics considerations including the optical and thermal properties of the PCM and its environment. The laser energy threshold for reversibly changing the phase of the PCM is determined through both theoretical analysis and experimental investigation, not only between fully amorphous and crystalline states but also between partially recrystallized states. Then, the non‐negligible impact of the material's polycrystallinity and anisotropy on the power thresholds for optical switching is revealed. Finally, the challenges related to laser amorphization of thick Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> layers are addressed, as well as strategies to overcome them. These results enable a qualitative and quantitative understanding of the physics behind the optically‐induced reversible change of phase in Sb<jats:sub>2</jats:sub>S<jats:sub>3</jats:sub> layers.</jats:p>