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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Noé, Pierre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024Ferroelectric spin orbit devices for ultralow power computing
- 2024Optical Properties of GeSe 1 −x Te x Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devicescitations
- 2023Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayerscitations
- 2023Origin of the Unusual High Optical Nonlinearities Observed in Glassy Chalcogenidescitations
- 2022Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayerscitations
- 2021Overcoming the Thermal Stability Limit of Chalcogenide Phase‐Change Materials for High‐Temperature Applications in GeSe<sub>1−<i>x</i></sub>Te<sub><i>x</i></sub> Thin Filmscitations
- 2020Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealedcitations
- 2020Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical studycitations
- 2020Ovonic Threshold Switching in Se-Rich GexSe1−x Glasses from an Atomistic Point of View: The Crucial Role of the Metavalent Bonding Mechanismcitations
- 2020New insights into thermomechanical behavior of GeTe thin films during crystallizationcitations
- 2020Overcoming the thermal stability limit of chalcogenide Phase‐Change Materials for high‐Temperature applications in GeSe$_{1−x}$ Te$_x$ thin filmscitations
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article
Origin of the Unusual High Optical Nonlinearities Observed in Glassy Chalcogenides
Abstract
peer reviewed ; Nonlinear photonics integrated at the chip scale opens the path to new applications in an increasing number of fields such as all-optical computing, high bit rate communications on chip, or embedded sensing with frequency combs and super-continuum sources. All these applications require materials having the best trade-off between optical losses, Kerr refractive index, and compatibility with current nanofabrication facilities. Although optimizing the nanofabrication process can minimize linear optical losses to some extent, optimizing the Kerr index of the materials remains challenging because a clear understanding of the link between atomic structure and optical nonlinearities is still missing. This is precisely what this work addresses for chalcogenide glasses based on thin films of Ge-Sb-Se alloys, a promising class of materials fully compatible with large-scale integration technology from the microelectronics industry. By coupling nonlinear Kerr index metrology with ab initio molecular dynamics calculations of amorphous models, this work unveils the unique molecular patterns in these alloys that are responsible for their unusual nonlinear polarizability. This provides for the first time valuable rules for the design of new optical materials with improved Kerr index enabling miniaturization and implementation of future nonlinear photonic devices that can then operate at significantly lower power.