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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zeimpekis, Ioannis
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition processcitations
- 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride doping
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2022Room temperature phase transition of W-doped VO 2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Tuning MoS2 metamaterial with elastic strain
- 2019Tuning MoS 2 metamaterial with elastic strain
- 2019High-throughput physical vapour deposition flexible thermoelectric generatorscitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Wafer scale pre-patterned ALD MoS 2 FETs
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Structural modification of Ga-La-S glass for a new family of chalcogenidescitations
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017Tuneable sputtered films by doping for wearable and flexible thermoelectrics
- 2017A lift-off method for wafer scale hetero-structuring of 2D materials
Places of action
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article
Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substrates
Abstract
<p>The unique structural transition of VO<sub>2</sub> between dielectric and metallic phases has significant potential in optical and electrical applications ranging from volatile switches and neuromorphic computing to smart devices for thermochromic control and radiative cooling. Critical condition for their widespread implementation is scalable deposition method and reduction of the phase transition to near room temperature. Here, a W:VO<sub>2</sub> process based on atomic layer deposition (ALD) is presented that enables precise control of W-doping at the few percent level, resulting in a viable controllable process with sufficient W incorporation into VO<sub>2</sub> to reduce the phase transition to room temperature. It is demonstrated that the incorporation of 1.63 at.% W through ALD growth leads to a state-of-the-art phase transition at 32 °C with emissivity contrast between the low-temperature and high-temperature phase exceeding 40% in a metasurface-based radiative cooling device configuration. The process is shown to be viable on 200 mm silicon substrates as well as flexible polyimide films. The full and self-consistent temperature-dependent characterization of the W-doped VO<sub>2</sub> using spectroscopic ellipsometry, electrical conductivity, mid-wave infrared camera, and Fourier transform infrared emissivity, allows for a fully validated material model for the theoretical design of various smart and switchable device applications.</p>