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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sun, Kai
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2022VO 2 metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2022Room temperature phase transition of W-doped VO 2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022VO2metasurface smart thermal emitter with high visual transparency for passive radiative cooling regulation in space and terrestrial applicationscitations
- 2020Multi-stack insulator to minimise threshold voltage drift in ZnO FET sensors operating in ionic solutionscitations
- 2012Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applicationscitations
- 2012Effect of an oxide cap layer and fluorine implantation on the metal-induced lateral crystallization of amorphous siliconcitations
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article
Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substrates
Abstract
<p>The unique structural transition of VO<sub>2</sub> between dielectric and metallic phases has significant potential in optical and electrical applications ranging from volatile switches and neuromorphic computing to smart devices for thermochromic control and radiative cooling. Critical condition for their widespread implementation is scalable deposition method and reduction of the phase transition to near room temperature. Here, a W:VO<sub>2</sub> process based on atomic layer deposition (ALD) is presented that enables precise control of W-doping at the few percent level, resulting in a viable controllable process with sufficient W incorporation into VO<sub>2</sub> to reduce the phase transition to room temperature. It is demonstrated that the incorporation of 1.63 at.% W through ALD growth leads to a state-of-the-art phase transition at 32 °C with emissivity contrast between the low-temperature and high-temperature phase exceeding 40% in a metasurface-based radiative cooling device configuration. The process is shown to be viable on 200 mm silicon substrates as well as flexible polyimide films. The full and self-consistent temperature-dependent characterization of the W-doped VO<sub>2</sub> using spectroscopic ellipsometry, electrical conductivity, mid-wave infrared camera, and Fourier transform infrared emissivity, allows for a fully validated material model for the theoretical design of various smart and switchable device applications.</p>