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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Li
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor depositioncitations
- 2023First-Ply Failure Analysis of Helicoidal/Bouligand Bio-Inspired Laminated Composite Platescitations
- 2022Tuning the crystal structure and optical properties of selective area grown InGaAs nanowirescitations
- 2022Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronicscitations
- 2021Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
- 2021Multivariate genomic analysis and optimal contributions selection predicts high genetic gains in cooking time, iron, zinc, and grain yield in common beans in East Africacitations
- 2021Passivation of InP solar cells using large area hexagonal-BN layerscitations
- 2019Damage analysis of a perfect broadband absorber by a femtosecond lasercitations
- 2018Tungsten Refractory Plasmonic Material for High Fluence Bowtie Nano-antenna
- 2018Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cellscitations
- 2017Imaging of doped iron pnictides across a structural phase transition
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
- 2016Cluster analysis of acoustic emission signals for 2D and 3D woven carbon fiber/epoxy compositescitations
- 2016Shear-Coupled Grain Growth and Texture Development in a Nanocrystalline Ni-Fe Alloy during Cold Rollingcitations
- 2015Identification of the damage in woven composites based on acoustic emission cluster analysis
- 2014Encapsulated <scp>PDMS</scp> Microspheres with Reactive Handlescitations
- 2013On the mechanical effects of a nanocrystallisation treatment for ZrO2 oxide films growing on a zirconium alloycitations
- 2013Reversible loss of bernal stacking during the deformation of few-layer graphene in nanocompositescitations
- 2012Experimental and numerical study of the effects of a nanocrystallisation treatment on high-temperature oxidation of a zirconium alloycitations
- 2011Work softening in nanocrystalline materials induced by dislocation annihilationcitations
- 2011Ultrafiltration by gyroid nanoporous polymer membranescitations
- 2010Hydrophilic nanoporous materials
- 2008Plastic behavior of a nickel-based alloy under monotonic-tension and low-cycle-fatigue loadingcitations
- 2007Anion selectivity in zwitterionic amide-funtionalised metal salt extractantscitations
Places of action
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article
Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronics
Abstract
<p>Catalyst-free InGaAs nanowires are promising building blocks for optoelectronic devices operating at telecommunication wavelengths. Despite progress, the applications of InGaAs nanowires remain limited due to their high density of surface states that degrade their optical properties. Here, InGaAs nanowires with superior optical properties are achieved by effectively suppressing their surface states with an InP passivation shell. Optimal InP shell growth conditions and thickness to maximize the minority carrier lifetime are identified. The photoluminescence intensity of these passivated InGaAs nanowires is up to three orders of magnitude higher than that of their bare counterparts. Moreover, a long minority carrier lifetime of up to ≈13 ns is measured with these passivated nanowires at room temperature. Optimal passivation of InGaAs nanowires with an emission wavelength of 1530 nm results in an ultra-low surface recombination velocity of ≈280 cm s<sup>−1</sup>. In addition to the shell, the crystal structure of these nanowires plays an important role in the luminescence intensity. Combined cathodoluminescence mapping and high-resolution transmission electron microscopy along the nanowires reveal significantly lower emission intensities in wurtzite predominant sections of the nanowires than zinc blende predominant ones.These insights on the optimal passivation of InGaAs provide directions for engineering high-performance nanoscale-devices in the telecommunication wavelength.</p>