| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mazánek, Vlastimil
University of Chemistry and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Electrochemical Intercalation and Exfoliation of CrSBr into Ferromagnetic Fibers and Nanoribbonscitations
- 2023Electrochemical Decalcification-Exfoliation of Two-Dimensional Siligene, SixGey: Material Characterization and Perspectives for Lithium-Ion Storagecitations
- 2022Two-dimensional layered chromium selenophosphate: advanced high-performance anode material for lithium-ion batteriescitations
- 2022Exfoliated Fe3GeTe2 and Ni3GeTe2 materials as water splitting electrocatalystscitations
- 2022Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterpartscitations
- 2022All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectriccitations
- 2022Universal Capacitance Boost—Smart Surface Nanoengineering by Zwitterionic Molecules for 2D MXene Supercapacitorcitations
- 2021Cobalt Phosphorous Trisulfide as a High-Performance Electrocatalyst for the Oxygen Evolution Reactioncitations
- 2021Functionalized Germanene-Based Nanomaterials for the Detection of Single Nucleotide Polymorphismcitations
Places of action
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article
Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterparts
Abstract
Dopant levels in layered compound InSe have considerable potential in optoelectronic devices. Dopant-induced trap states are essential in determining the optoelectrical properties of semiconductors. However, detailed studies of the persistent photoconductivity (PPC) and related mechanism in doped InSe are still not available. Here, the dependence of excitation energy on the shallow donor level caused by the dopants (Ge, Sn) in InSe is systematically investigated. Notably, prolonged decay time originates from extrinsic Ge, Sn dopants and these doping-assisted states improve the optoelectrical performance of pristine InSe. Those photogenerated carriers are trapped in the Ge, Sn shallow impurities states, which are long-lived enough to be extracted into Au contacts before annihilation. This renders Ge-, Sn-doped InSe photoconductive gain and maximized photocurrent. Sn-doped InSe single crystal device can achieve a maximum responsivity of around 1.7 x 10(6) A W-1 under red light and detectivity of 6.18 x 10(13) Jones. In addition, Hall measurements identify the carrier concentration and the Hall mobility of pristine InSe is significantly changed by Ge and Sn dopants. It is demonstrated that doping Ge, Sn atoms is responsible for the obvious photoconductivity and beneficial for the high-performance photodetector, offering intriguing opportunities for novel holographic memory applications.