| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Gelinck, Gerwin H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2023Origin and Energy of Intra-Gap States in Sensitive Near-Infrared Organic Photodiodescitations
- 2022Multidimensional Perovskites for High Detectivity Photodiodescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021A thin and flexible scanner for fingerprints and documents based on metal halide perovskitescitations
- 2021Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generationcitations
- 2020On the origin of dark current in organic photodiodescitations
- 2019Short-channel vertical organic field-effect transistors with high on/off ratioscitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2018A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processingcitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2016Data retention in organic ferroelectric resistive switchescitations
- 2015Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
- 2015Surface directed phase separation of semiconductor ferroelectric polymer blends and their use in non-volatile memoriescitations
- 2012Charge transport in amorphous InGaZnO thin film transistorscitations
- 2011Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yieldcitations
- 2011Multilevel information storage in ferroelectric polymer memoriescitations
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article
On the origin of dark current in organic photodiodes
Abstract
Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias (J d ) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of J d in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of J d are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating J d to material parameters, insights into the origin of J d are obtained that enable the future selection of successful OPD materials.