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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bock, Claudia
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Topics
Publications (9/9 displayed)
- 2024Wafer‐Scale Demonstration of Polycrystalline MoS<sub>2</sub> Growth on 200 mm Glass and SiO<sub>2</sub>/Si Substrates by Plasma‐Enhanced Atomic Layer Depositioncitations
- 2022Low-temperature ALD process development of 200 mm wafer-scale MoS2 for gas sensing applicationcitations
- 2022Nucleation and growth studies of large-area deposited WS(_2) on flexible substrates
- 2021Raman spectroscopy as an effective tool for characterizing large-area 2D TMDs deposited from the gas phase
- 2020From Precursor Chemistry to Gas Sensors:Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applicationscitations
- 2020From precursor chemistry to gas sensors
- 2014Influence of grain orientation on the local deformation mode induced by cavitation erosion in a CuSnNi alloy
- 2009Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors
- 2009Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.citations
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article
Wafer‐Scale Demonstration of Polycrystalline MoS<sub>2</sub> Growth on 200 mm Glass and SiO<sub>2</sub>/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition
Abstract
<jats:title>Abstract</jats:title><jats:p>2D materials like transition metal dichalcogenides (TMDCs) have been widely studied and are a gateway to modern technologies. While research today is mostly carried out on a laboratory scale, there is an intensive need for reliable processes on a wafer‐scale, starting with monolayer‐precise deposition of high‐quality films. In this work, a plasma‐enhanced atomic layer deposition (PEALD) process is developed on a 200 mm SiO<jats:sub>2</jats:sub>/Si substrate. The layers are investigated regarding crystallinity, composition, homogeneity, microstructure, topography, and electrical properties. The process is then applied on 200 mm alkali‐free glass wafers aiming toward flexible electronics and compatibility with Si processes. A complete coverage of the wafer with a satisfying uniformity is achieved on both substrates and direct polycrystalline growth of MoS<jats:sub>2</jats:sub> films is verified on the entire wafer at a substrate temperature of <jats:italic>T </jats:italic>= 230 °C. On glass, the deposited MoS<jats:sub>2</jats:sub> films exhibit a higher crystallinity and are more planar compared to the SiO<jats:sub>2</jats:sub>/Si substrate. Furthermore, application relevant few‐nanometer thick layers are investigated in detail. This low‐temperature process inspires optimism for future direct integration of 2D‐materials in an economical bottom‐up approach on a wide variety of substrates, thus paving the way for industrial mass production.</jats:p>