• Krahl, Fabian
• Shin, Dongho
• Mukherjee, Samik
• Pang, Chi
• Wrzesińskalashkova, Angelika
• Wohlrab, Steve
• Bahrami, Amin
• Vaynzof, Yana
• Nielsch, Kornelius
• Nasiri, Noushin
• Yang, Jun
• Lehmann, Sebastian
• Popov, Alexey

Abstract

<jats:title>Abstract</jats:title><jats:p>SnS<jats:sub>2</jats:sub> stands out as a highly promising 2D material with significant potential for applications in the field of electronics and photovoltaic technologies. Numerous attempts have been undertaken to modulate the physical properties of SnS<jats:sub>2</jats:sub> by doping with various metal ions. Here, a series of Sb‐doped SnS<jats:sub>2</jats:sub> is deposited via atomic layer deposition (ALD) super‐cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS<jats:sub>2</jats:sub>. It is found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS<jats:sub>2</jats:sub>) to 4.75 eV (Sb‐doped SnS<jats:sub>2</jats:sub> with 9:1 ratio). When integrated into photodetectors, the Sb‐doped SnS<jats:sub>2</jats:sub> showed improved performance, demonstrating increased peak photoresponsivity values from 19.5 to 27.8 A W<jats:sup>−1</jats:sup> at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next‐generation optoelectronic applications based on SnS<jats:sub>2</jats:sub>.</jats:p>

Topics

• impedance spectroscopy
• thin film
• crystallinity
• atomic layer deposition